Infineon BSC026NE2LS5ATMA1 OptiMOS 5 25V Power MOSFET Datasheet and Application Review

The relentless pursuit of higher efficiency and power density in modern electronics has made the choice of power switching devices more critical than ever. Infineon's BSC026NE2LS5ATMA1, a member of the esteemed OptiMOS™ 5 25V family, stands out as a premier solution tailored for demanding low-voltage applications. This article provides a comprehensive review of its datasheet specifications and potential use cases.

Engineered on a state-of-the-art superjunction process, the OptiMOS™ 5 technology represents a significant leap forward from its predecessors. The BSC026NE2LS5ATMA1 is characterized by its exceptionally low figure-of-merit (FOM), which is a product of its on-state resistance (RDS(on)) and gate charge (Qg). This specific part boasts a maximum RDS(on) of just 2.6 mΩ at 10 Vgs, a critical parameter that directly translates to reduced conduction losses. This ultra-low resistance is paramount in high-current scenarios, as it minimizes heat generation and improves overall system thermal performance.

Complementing its low RDS(on) is its outstanding switching performance. With a total gate charge (Qg) of only 13 nC typical, the MOSFET can be driven into saturation and back extremely quickly. This allows for operation at higher switching frequencies, which in turn enables the design of smaller and more compact passive components like inductors and transformers. The low Qg also reduces the stress on the gate driver circuitry, simplifying design and potentially lowering the bill of materials cost.

Housed in a space-saving PG-TDSON-8 (5x6) package, this MOSFET is designed for automated assembly and offers a superior thermal footprint. The package's exposed top and bottom side cooling capabilities ensure efficient heat dissipation, which is crucial for maintaining performance and reliability in high-power-density designs. Its AEC-Q101 qualification further makes it a robust and reliable choice for automotive environments, including applications like electric power steering (EPS), braking systems, and 12/24V DC-DC converters.

Beyond automotive, the BSC026NE2LS5ATMA1 is exceptionally well-suited for a wide array of industrial and consumer applications. It is an ideal candidate for:

Synchronous rectification in switch-mode power supplies (SMPS) for servers and telecom equipment.

Motor control and driving in robotics, drones, and high-performance tools.

Battery management systems (BMS), including load switches and protection circuits, where minimizing voltage drop is essential.

ICGOOODFIND: The Infineon BSC026NE2LS5ATMA1 OptiMOS™ 5 25V MOSFET sets a high bar for performance in its class. Its winning combination of ultra-low RDS(on), minimal gate charge, and excellent thermal characteristics in a compact package makes it an indispensable component for engineers aiming to push the boundaries of efficiency and power density in modern electronic systems.

Keywords: OptiMOS™ 5, Low RDS(on), Power Efficiency, Synchronous Rectification, AEC-Q101.