Infineon IPG20N06S4L26ATMA1 OptiMOS Power MOSFET: Key Features and Applications
The Infineon IPG20N06S4L26ATMA1 is a member of the renowned OptiMOS™ power MOSFET family, representing a benchmark in efficiency and performance for low-voltage applications. Engineered with Infineon's advanced semiconductor technology, this N-channel MOSFET is designed to minimize power losses and maximize power density in a compact, robust package. Its key characteristics make it an ideal choice for a wide array of modern electronic systems.
Key Features
At the heart of this MOSFET's performance is its exceptionally low on-state resistance (RDS(on)) of just 2.6 mΩ (max. at VGS = 10 V). This ultra-low resistance is critical for reducing conduction losses, which directly translates to higher efficiency and less heat generation. This allows for cooler operation and can reduce the need for extensive heat sinking, saving both space and cost in the final design.
The device is rated for a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 200 A at a case temperature of 25°C, showcasing its ability to handle high power levels. Furthermore, it features a low gate charge (QG) and optimized internal gate resistance, which ensures very fast switching speeds. This combination is essential for high-frequency switching applications, as it significantly lowers switching losses and enables designers to increase the switching frequency, leading to smaller passive components like inductors and capacitors.
Housed in a TO-leadless (TOLL) package, the IPG20N06S4L26ATMA1 offers a superior footprint and a very low profile. This package is designed for superior thermal and electrical performance, with a large exposed top and bottom pad for excellent power dissipation. Its leadless nature also minimizes parasitic inductance, which is a major advantage in high-speed switching circuits.
Primary Applications
The blend of high current capability, low losses, and a compact package makes this MOSFET exceptionally versatile. Its primary application areas include:
DC-DC Conversion: It is a premier choice for high-current, non-isolated point-of-load (POL) converters, voltage regulator modules (VRMs), and buck/boost converters in computing, server, and telecommunications infrastructure.
Motor Control: The MOSFET's high efficiency and current handling make it perfect for driving motors in industrial automation, robotics, and automotive systems (e.g., electric power steering, pump controls).
Battery Management Systems (BMS): Its low RDS(on) is ideal for protecting circuits and load switches in battery-powered applications, including electric vehicles, power tools, and energy storage systems, as it minimizes voltage drop and power loss.
Synchronous Rectification: In switched-mode power supplies (SMPS), particularly for secondary-side rectification, its fast switching characteristics and low on-resistance greatly improve overall power supply efficiency.
ICGOODFIND: The Infineon IPG20N06S4L26ATMA1 OptiMOS™ MOSFET sets a high standard for power switching components. Its industry-leading low on-resistance, high current capability, and thermally efficient TOLL package make it a cornerstone technology for designers aiming to achieve maximum efficiency, high power density, and reliability in demanding modern applications.
Keywords: Power MOSFET, Low RDS(on), High Efficiency, TOLL Package, Motor Control
