Infineon IPB120N04S4-01 OptiMOS 5 40V Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge, the Infineon IPB120N04S4-01, a member of the advanced OptiMOS™ 5 40V family, emerges as a premier solution for power conversion applications. This Power MOSFET is engineered to deliver exceptional performance in a compact package, making it an ideal choice for a wide array of demanding scenarios.

A cornerstone of this device's superiority is its exceptionally low figure-of-merit (FOM), characterized by an ultra-low on-state resistance (R DS(on)) and minimal gate charge (Q G). The IPB120N04S4-01 boasts a maximum R DS(on) of just 1.2 mΩ at 10 V, significantly reducing conduction losses. Concurrently, its low gate charge ensures swift switching transitions, which directly minimizes switching losses. This optimal balance is critical for achieving peak efficiency, especially in high-frequency switching regulators found in server power supplies, telecom infrastructure, and high-performance computing.

Furthermore, the MOSFET is housed in the space-saving SuperSO8 package, which offers a drastically reduced footprint compared to standard D2PAK packages. Despite its miniature size, it provides superior thermal and electrical performance due to its innovative leadframe design. This allows designers to push the boundaries of power density, enabling smaller, lighter, and more efficient end products without compromising on thermal management or reliability.

The device also excels in robustness and operational stability. It features a high body-diode ruggedness and is qualified for avalanche energy, ensuring high reliability even under harsh operating conditions, such as in automotive environments or during unexpected voltage spikes. This makes it a robust and dependable component for mission-critical applications.

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In summary, the Infineon IPB120N04S4-01 OptiMOS™ 5 40V MOSFET sets a new benchmark for efficiency and power density. Its industry-leading low R DS(on), fast switching capability, and robust package design make it an indispensable component for engineers striving to create the next generation of high-efficiency power conversion systems.

Keywords: Power Efficiency, Low RDS(on), OptiMOS 5, SuperSO8 Package, High-Frequency Switching