Infineon IPN50R3K0CE: A High-Performance 500V CoolMOS™ Power Transistor for Efficient Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's IPN50R3K0CE, a 500V CoolMOS™ power transistor engineered to set new benchmarks in performance for a wide array of switching applications.
Built upon Infineon's advanced superjunction (SJ) technology, the IPN50R3K0CE is designed to minimize crucial switching losses while maintaining an exceptionally low on-state resistance (RDS(on)). This specific part boasts a maximum RDS(on) of just 38 mΩ at a gate-source voltage of 10 V, a key factor in reducing conduction losses. The result is a device that operates with significantly higher efficiency, runs cooler, and enables the design of more compact power systems by reducing the need for large heat sinks.
A standout feature of the IPN50R3K0CE is its integrated fast body diode. This integration is critical for hard-switching topologies like power factor correction (PFC) and flyback converters, where the diode's reverse recovery characteristics directly impact overall efficiency and electromagnetic interference (EMI). The fast body diode ensures soft recovery, leading to lower switching noise and reduced stress on the transistor itself, enhancing system reliability.
The transistor's high voltage rating of 500 V makes it an ideal choice for mains-powered applications, including:
Switched-Mode Power Supplies (SMPS): Particularly in server, telecom, and industrial power supplies where efficiency standards are stringent.
Power Factor Correction (PFC) Stages: Essential for complying with international energy efficiency regulations.
Lighting Solutions: Such as high-bay LED drivers and electronic ballasts.
Motor Control and Inverter Systems: For appliances and industrial drives.
Furthermore, the IPN50R3K0CE offers excellent dv/dt and di/dt capability, providing robust switching performance and greater design margin against unexpected voltage and current transients. Its low gate charge (Qg) also simplifies drive circuit design, allowing for the use of smaller, more economical gate drivers.
The Infineon IPN50R3K0CE exemplifies the progress in power MOSFET technology, delivering a superior blend of high efficiency, robust switching performance, and thermal management. Its optimized characteristics make it a compelling component for designers aiming to push the boundaries of power density and energy savings in next-generation electronic equipment.
Keywords: CoolMOS™, Superjunction Technology, Low RDS(on), Integrated Fast Body Diode, Efficient Switching
