Infineon IPB108N15N3G: High-Performance OptiMOS 5 Power MOSFET for Advanced Switching Applications

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPB108N15N3G, a member of the OptiMOS™ 5 power MOSFET family, stands out as a premier solution engineered to meet the rigorous demands of modern high-frequency switching applications. This device encapsulates Infineon’s cutting-edge semiconductor technology, delivering exceptional performance that is critical for next-generation power conversion systems.

At the core of the IPB108N15N3G is its advanced superjunction technology, which enables an outstandingly low on-state resistance (RDS(on)) of just 1.08 mΩ maximum at 10 V. This ultra-low resistance is instrumental in minimizing conduction losses, thereby significantly enhancing overall system efficiency. Whether deployed in synchronous rectification stages, DC-DC converters, or motor drive circuits, this MOSFET ensures that energy wastage is kept to an absolute minimum, which is especially vital for battery-operated and energy-conscious applications.

Another defining characteristic of this component is its superior switching performance. The OptiMOS™ 5 technology reduces gate charge (Qg) and output capacitance (Coss), which allows for faster switching transitions and lower switching losses. This makes the IPB108N15N3G exceptionally suitable for high-frequency operations, enabling designers to increase power density by using smaller magnetics and capacitors without compromising thermal management or efficiency.

Thermal management is further reinforced by the device’s optimized package design. Housed in an TOLL (TO-leadless) package, the MOSFET offers an extremely low thermal resistance and improved cooling capability due to its large exposed cooling pad. This package not only saves valuable PCB space but also simplifies the assembly process. The result is a robust thermal performance that supports sustained operation under high-load conditions, ensuring long-term reliability.

The IPB108N15N3G is rated for 150 V drain-source voltage and a continuous drain current of 240 A, making it highly versatile across industrial, automotive, and renewable energy applications. Its strong capability to handle high current levels—combined with high avalanche ruggedness—ensures durability even in demanding environments.

ICGOODFIND: The Infineon IPB108N15N3G sets a high benchmark for power MOSFETs with its ultra-low RDS(on), excellent switching characteristics, and superior thermal performance, making it an optimal choice for advanced high-efficiency power systems.

Keywords:

OptiMOS™ 5,

Low RDS(on),

High-Frequency Switching,

TOLL Package,

Power Efficiency